| 摘要 |
A high-frequency induction heater (40) for use in the growth of a semiconductor single crystal by the FZ method, including a plurality of high-frequency induction heating coils (41, 42) disposed in concentric juxtaposed relation to each other and each having a pair of power supply terminals (43a, 43b; 44a, 44b) provided for supplying a high-frequency current to the associated heating coil (41, 42), with the power supply terminals (43a, 43b) of one (41) of the heating coils (41, 42) disposed in a space (48) defined between opposite ends of an adjacent heating coil (42) disposed outside the one heating coil (41), wherein a pair of electrically conductive members (50a, 50b) is attached to the pair of power supply terminals (43a, 43b), respectively, of at least an innermost one (41) of the heating coils (41, 42) so as to cover a space (49) defined between the power supply terminals (43a, 43b) of the inner-most heating coil (41). With the induction heater thus constructed, the so-called "pulsation", i.e., microscopic resistivity fluctuations and the macroscopic resistivity distribution in the diametrical and growth directions can be improved at one time. <IMAGE> |
