发明名称 INTEGRAL THIN-FILM METAL RESISTOR WITH IMPROVED TOLERANCE AND SIMPLIFIED PROCESSING
摘要 A method for manufacturing a microelectronic assembly to have a resistor (12) on a circuit board (10). The method entails applying a photosensitive dielectric to a substrate (18) to form a dielectric layer. The dielectric layer is photoimaged to polymerize a first portion (22). An electrically resistive film (14) is then applied to the dielectric layer and the dielectric layer is developed so that a portion of the resistive film remains over the second portion to form the resistor. A second dielectric layer (32) is then applied, photoimaged and developed to form openings (34). Terminations (16) can then be formed in the openings by known plating techniques. The resistive film is preferably a multilayer film that includes an electrically resistive layer, such as NiP, NiCr or other nickel alloy and a sacrificial backing such as a layer of copper.
申请公布号 WO0002088(A1) 申请公布日期 2000.01.13
申请号 WO1999US14755 申请日期 1999.06.29
申请人 MOTOROLA INC. 发明人 DUNN, GREGORY, J.;SAVIC, JOVICA;BEUHLER, ALLYSON
分类号 G03F7/00;H01C17/06;H01C17/07;H05K1/16;H05K3/00;H05K3/02;H05K3/04;H05K3/06;H05K3/38;(IPC1-7):G03C5/00 主分类号 G03F7/00
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