| 摘要 |
<p>A method of manufacturing a semiconductor device comprises a first step of providing a substrate (12) provided with interconnection patterns (10) and covered with a protective layer (50) except those portions to be connected electrically with electrodes (22) of a semiconductor element (20), and providing anisotropic conductive material (16) between the interconnection patterns (10) and the electrodes (22) on the substrate (12), the anisotropic conductive material extending to the protection layer (50) from the area where the semiconductor element (20) is to be mounted; and a second step of connecting between the interconnection patterns (10) and the electrodes (22) electrically by bonding the semiconductor element (20) to the substrate (12) with the anisotropic conductive material (16).</p> |
