| 摘要 |
On the integrated circuit is deposited an insulation (100) and a conductive (102) layer. On the conductive layer is deposited a photoresist layer (104), on the low region thickly, but thinly on the high region. A photomask (106,108) is used for the photoresist layer to form a photoresist structure. The mask consists of transparent substrate with opaque structures opposite the low region with wider spacing of mask structures than the required conductive structures, while the transparent mask structures have narrower spacing. An Independent claim is also included for the photomask. |
