发明名称 JUNCTION-BASED FIELD EMISSION DISPLAY
摘要 <p>A junction-based field emission display, wherein the junctions are formed by depositing a semiconducting or dielectric, low work function, negative electron affinity (NEA) silicon-based compound film (SBCF) onto a metal or n-type semiconductor substrate. The SBCF can be doped to become a p-type semiconductor. A small forward bias voltage is applied across the junction so that electron transport is from the substrate into the SBCF region. Upon entering into this NEA region, many electrons are released into the vacuum level above the SBCF surface and accelerated toward a positively biased phosphor screen anode, hence lighting up the phosphor screen for display. To turn off, simply switch off the applied potential across the SBCF/substrate. May be used for field emission flat panel displays.</p>
申请公布号 WO2000002223(A1) 申请公布日期 2000.01.13
申请号 US1999014799 申请日期 1999.06.28
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址