摘要 |
To form large-area thin films having in-plane uniform thin-film thickness and optical or electrical characteristics, a thin film forming apparatus comprises a substrate holding means (7) for holding a substrate (2), a target holding means (12) for holding a target (1), a sputter gas supplying means (3) for supplying into a reaction chamber a sputter gas for sputtering the target, a reactive gas supplying means (4) for supplying a reactive gas, and a power supplying means (8) for supplying a power for generating a discharge to take place between the target and the substrate, wherein a partition member (6) having a plurality of openings is provided between the target and the substrate, and a supply port (10) for the sputter gas and a supply port (11) for the reactive gas are separately provided at a distance from each other so that the sputter gas is supplied to a space formed between the target and the partition member and the reactive gas is supplied to a space formed between the substrate and the partition member. <IMAGE> |