发明名称 Thin film forming apparatus and process for forming thin film using same
摘要 To form large-area thin films having in-plane uniform thin-film thickness and optical or electrical characteristics, a thin film forming apparatus comprises a substrate holding means (7) for holding a substrate (2), a target holding means (12) for holding a target (1), a sputter gas supplying means (3) for supplying into a reaction chamber a sputter gas for sputtering the target, a reactive gas supplying means (4) for supplying a reactive gas, and a power supplying means (8) for supplying a power for generating a discharge to take place between the target and the substrate, wherein a partition member (6) having a plurality of openings is provided between the target and the substrate, and a supply port (10) for the sputter gas and a supply port (11) for the reactive gas are separately provided at a distance from each other so that the sputter gas is supplied to a space formed between the target and the partition member and the reactive gas is supplied to a space formed between the substrate and the partition member. <IMAGE>
申请公布号 EP0860513(A3) 申请公布日期 2000.01.12
申请号 EP19980102793 申请日期 1998.02.18
申请人 CANON KABUSHIKI KAISHA 发明人 SONE, KAZUHO
分类号 C23C14/00;H01J37/32;H01J37/34 主分类号 C23C14/00
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