| 发明名称 |
SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE |
| 摘要 |
<p>A MOS transistor is composed of a semiconductor substrate 11 in which a Si thin film 13 is heteroepitaxially grown on a surface of an SiC substrate 12. A source electrode 38 and a drain electrode 34 are so provided that the above SiC substrate 12 is disposed in an output current path. According to this construction, a semiconductor device with a high dielectric strength and current-carrying capacity is achieved. <IMAGE></p> |
| 申请公布号 |
EP0971394(A1) |
申请公布日期 |
2000.01.12 |
| 申请号 |
EP19980936742 |
申请日期 |
1998.08.11 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KITABATAKE, MAKOTO |
| 分类号 |
H01L21/04;H01L21/78;H01L29/24;H01L29/267;H01L29/78;(IPC1-7):H01L21/20;H01L21/203;H01L21/205;H01L29/73;H01L21/331;H01L29/739;H01L21/336 |
主分类号 |
H01L21/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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