发明名称 |
METHOD AND DEVICE FOR ACTIVATING SEMICONDUCTOR IMPURITIES |
摘要 |
<p>An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 mu m to 11 mu m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 mu m to 10 mu m. <IMAGE></p> |
申请公布号 |
EP0971397(A1) |
申请公布日期 |
2000.01.12 |
申请号 |
EP19980955993 |
申请日期 |
1998.11.30 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YOSHIDA, AKIHISA;KITAGAWA, MASATOSHI;UCHIDA, MASAO;KITABATAKE, MAKOTO;MITSUYU, TSUNEO |
分类号 |
H01L21/04;H01L29/24;H01L29/861;(IPC1-7):H01L21/265;H01L21/268 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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