| 发明名称 |
STRONTIUM BISMUTH NIOBATE TANTALATE FERROELECTRIC THIN FILM |
| 摘要 |
<p>Thin film ferroelectric materials for use in integrated memory circuits, such as FERAMS and the like, contain strontium bismuth niobium tantalate having an empirical formula SrBi2+E(NbXTa2-X)O9+3E/2, wherein E is a number representing an excess amount of bismuth ranging from zero to 2; and X is a number representing an excess amount of niobium ranging from 0.01 to 0.9. The thin films demonstrate an exceptional resistance to polarization imprinting when challenged with unidirectional voltage pulses.</p> |
| 申请公布号 |
EP0970516(A1) |
申请公布日期 |
2000.01.12 |
| 申请号 |
EP19980906097 |
申请日期 |
1998.02.04 |
| 申请人 |
SYMETRIX CORPORATION |
发明人 |
CUCHIARO, JOSEPH, D.;SOLAYAPPAN, NARAYAN;PAZ DE ARAUJO, CARLOS, A.;MCMILLAN, LARRY, D. |
| 分类号 |
C01G35/00;G11C11/56;H01L21/316;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/92;(IPC1-7):H01L21/316;H01L21/320 |
主分类号 |
C01G35/00 |
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