Monolithically integrated final MOS-transistor stage with an overheating preventing circuit,申请号EP19930115145-传众专利搜索

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发明名称	Monolithically integrated final MOS-transistor stage with an overheating preventing circuit
摘要
申请公布号	EP0595018(B1)	申请公布日期	2000.01.12
申请号	EP19930115145	申请日期	1993.09.21
申请人	ROBERT BOSCH GMBH	发明人	UEBELE, MANFRED, DIPL.-ING.;BRAUCHLE, PETER, DIPL.-PHYS.
分类号	H03F1/52;H03K17/08;H03K17/082;(IPC1-7):H03F1/52	主分类号	H03F1/52
代理机构		代理人
主权项
地址

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