发明名称 ADHESIVE FILM FOR GRINDING BACK SURFACE OF SEMICONDUCTOR WAFER AND METHOD FOR GRINDING BACK SURFACE OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To prepare the subject film capable of preventing the occurrence or the like of breakages, micro cracks or the like of a specific semiconductor wafer when the back surface of the semiconductor wafer is being ground by forming a specific thermoplastic resin between a specific base film and a specific adhesive layer to limit the adhesion. SOLUTION: A film to be applied on a circuit forming surface when the back surface of a semiconductor wafer having protrusions of 25-300μm in height of one or more kind selected from electrodes and malfunctioning circuit discriminating marks on the circuit forming surface is being ground. In this film, an adhesive layer containing an acrylic acid alkyl ester adhesive polymer or the like having functional groups reactive to a cross linking agent and having a thickness of 1-30μm is formed on one surface of a base film having Shore D-type hardness of 30-50 and thickness of 30-500μm. Between these layers, a thermoplastic resin interlayer having JIS-A hardness of 10-55 and a thickness of 25-400μm is placed, and the adhesion of the adhesive film against a SUS 304-BA board is made 5-400 g/25 mm.
申请公布号 JP2000008010(A) 申请公布日期 2000.01.11
申请号 JP19980177934 申请日期 1998.06.25
申请人 MITSUI CHEMICALS INC 发明人 HIRAI KENTARO;FUJII YASUHISA;KATAOKA MAKOTO;FUKUMOTO HIDEKI;KUMAGAI MASATOSHI;MIYAGAWA SEISHI
分类号 C09J7/02;C09J133/04;H01L21/301;(IPC1-7):C09J7/02 主分类号 C09J7/02
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