发明名称 |
Method of determining the impurity concentration of impurity-doped polysilicon in semiconductor wafers |
摘要 |
A method for determining the impurity concentration of impurity-doped polysilicon layers in semiconductor wafers is provided. Through experiments, it is found that the reflectivity of an impurity-doped polysilicon layer is nearly a regular function of the impurity concentration thereof. Accordingly, an impurity-doped polysilicon layer having an unknown impurity concentration can be determined by first measuring the reflectivity thereof by illuminating the impurity-doped polysilicon layer with light, and then using mapping transformation to find the corresponding value of impurity concentration of the impurity-doped polysilicon layer. This method can be used instead of the conventional thermal wave method that often result in having to discard the wafers due to the incapability of reliably determining the impurity concentration of the polysilicon layers formed on the semiconductor wafers.
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申请公布号 |
US6014223(A) |
申请公布日期 |
2000.01.11 |
申请号 |
US19990862428 |
申请日期 |
1999.05.23 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LIN, JEN-TSUNG;CHEN, KUEN-CHU;WU, KENG-YUAN;CHEN, EDDIE |
分类号 |
G01N21/17;(IPC1-7):G01N21/55 |
主分类号 |
G01N21/17 |
代理机构 |
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地址 |
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