发明名称 Method for preventing poisoned vias and trenches
摘要 A method for preventing the occurrence of poisoned trenches and vias in a dual damascene process that includes performing a densification process, such as an plasma treatment, on the surface of the exposed dielectric layer around the openings before the openings are filled with conductive material. The densified surface of the dielectric layer is able to efficiently prevent the occurrence of poisoned trenches and vias caused by the outgassing phenomena.
申请公布号 US6013581(A) 申请公布日期 2000.01.11
申请号 US19980166821 申请日期 1998.10.05
申请人 UNITED MICROELECTRONICS CORP. 发明人 WU, KUN-LIN;LU, HORNG-BOR
分类号 H01L21/768;H05K3/00;H05K3/38;H05K3/46;(IPC1-7):H01B13/00 主分类号 H01L21/768
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