发明名称 |
Method for preventing poisoned vias and trenches |
摘要 |
A method for preventing the occurrence of poisoned trenches and vias in a dual damascene process that includes performing a densification process, such as an plasma treatment, on the surface of the exposed dielectric layer around the openings before the openings are filled with conductive material. The densified surface of the dielectric layer is able to efficiently prevent the occurrence of poisoned trenches and vias caused by the outgassing phenomena.
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申请公布号 |
US6013581(A) |
申请公布日期 |
2000.01.11 |
申请号 |
US19980166821 |
申请日期 |
1998.10.05 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
WU, KUN-LIN;LU, HORNG-BOR |
分类号 |
H01L21/768;H05K3/00;H05K3/38;H05K3/46;(IPC1-7):H01B13/00 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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