TANTALUM THIN FILM AND THIN FILM CONSISTING MAINLY OF TANTALUM AND THEIR PRODUCTION

摘要

PROBLEM TO BE SOLVED: To provide a method for chemically depositing a thin film containing tantalum on a substrate. SOLUTION: This method for chemically depositing a thin film containing tantalum on a substrate comprises charging (i) a substrate, (ii) a raw material precursor in a vapor state, and (iii) at least one kind of carrier gas into a deposition chamber and subsequently maintaining the temperature of the substrate in the chamber at about 70 deg.C to about 675 deg.C for such a sufficient period as depositing the thin film containing the tantalum on the substrate. The raw material precursor is expressed by the formula: Ta(I5-m-n-p)(Brm-p)(Cln-p)(Rp) [(m) is an integer of 0-5; (n) is an integer of 0-4; (p) is an integer of 0-4; R is selected from a group consisting of hydrogen and a lower alkyl).