发明名称 |
Method for forming field oxide film of semiconductor device |
摘要 |
A method for forming a field oxide film of a highly integrated semiconductor device, in which an annealing step is carried out during a field oxide film formation step for growing the field oxide film adapted to isolate elements of the semiconductor device. By the annealing step, it is possible to prevent a stress concentration phenomenon from occurring in a semiconductor substrate on which the field oxide film is formed, thereby reducing or eliminating a field oxide thinning phenomenon.
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申请公布号 |
US6013561(A) |
申请公布日期 |
2000.01.11 |
申请号 |
US19970961132 |
申请日期 |
1997.10.30 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
JANG, SE AUG;CHO, BYUNG JIN;KIM, JONG CHOUL |
分类号 |
H01L21/316;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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