发明名称 |
Semiconductor device having an improved lead connection structure and manufacturing method thereof |
摘要 |
A first polycide lead, which is formed on a silicon substrate, consists of a first doped polysilicon layer and a first tungsten silicide layer that is formed on the first doped polysilicon layer. An interlayer insulating film, which is formed on the silicon substrate, has an opening that reaches the first doped polysilicon layer. A second polycide lead, which is formed on the interlayer insulating film, consists of a second doped polysilicon layer that is connected to the first polycide lead in the opening and a second tungsten silicide layer that is formed on the second doped polysilicon layer. In the opening, the first and second doped polysilicon layers are in contact with each other at the side surfaces of the first polycide lead.
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申请公布号 |
US6013951(A) |
申请公布日期 |
2000.01.11 |
申请号 |
US19980116242 |
申请日期 |
1998.07.16 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
ISHIDA, TOMOHIRO;HARADA, SHIGERU;YAMASHITA, TAKASHI |
分类号 |
H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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