发明名称 METHOD FOR FORMING FUNCTIONAL INORGANIC COATING FILM
摘要 PROBLEM TO BE SOLVED: To obtain a functional inorganic coating film having excellent wear resistance and adhesion and a surface hard to be damaged by forming a photosemiconductor particles layer on the surface of a glass substrate, before a silicon layer having at least a predetermined tetrafunctional silicon unit is formed in the gap. SOLUTION: A functional inorganic coating film is formed such that a photosemiconductor particles layer and a silicon layer are formed in order. Irradiation of ultraviolet rays to the photosemiconductor causes active oxygen, so that the organic material is oxidized and decomposed. The silicon coating material used for forming the silicon layer contains a silicon resin having at least tetrafunctional silicon unit shown by a formula, and is the hydrolysis polycondensate of a mixture containing 0-10 mol. silicon compd. expressed by R2Si(OR1)3 and 0-0.6 mol. silicon compd. expressed by R22Si(OR1)2, with respect to 1 mol. silicon compd. expressed by Si(OR1)4 (R1, R2 denote univalent hydrocarbon groups).
申请公布号 JP2000006298(A) 申请公布日期 2000.01.11
申请号 JP19980176332 申请日期 1998.06.23
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 YAMAKI TAKEYUKI;TAKAHAMA KOICHI
分类号 B05D3/00;A01N61/00;B01J35/02;B05D5/00;B05D7/00;B05D7/24;B32B9/00;B32B17/06;C03C17/30;(IPC1-7):B32B9/00 主分类号 B05D3/00
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