Production of heavily-doped silicon

摘要

Provided is a method for the production of a heavily-doped silicon wherein an element X whose ionic radius is larger than Si and an element Y whose ionic radius is smaller than Si are added to a Si crystal growing atmosphere at an atomic ratio of X:Y=1:(1+ alpha ) or X:Y=(1+ alpha ):1 with the proviso of alpha being a value of 1-5. When Si is double-doped with the elements X and Y, the number of carriers is increased up to 1020-1022/cm3. The double-doping may be adaptable to any of a pull method, an epitaxy method or a selective diffusion method. The double-doping remarkably increases the number of carriers, so as to produce metallic Si which can be useful itself as a wiring material due to its low resistivity.