| 摘要 |
PROBLEM TO BE SOLVED: To decrease striae and light scattering bodies, to improve a destruction threshold value, to lessen light scattering loss and to improve the quality of a single crystal by growing the single crystal body specifying a pulling up direction from a melt of BaB2O4. SOLUTION: The (α-BaB2O4) single crystal is grown by determining substantially <120> direction as the pulling up direction by a pulling up method from the BaB2O4 melt. The 021} face at which a crystal habit is liable to arise is made to exist at the flanks by growth body this pulling up direction. Then, the fluctuation of its diameter is lessened and the occurrence of the striae is substantially obviated. TheαBBO(α-BaB2O4) single crystal is grown by determining the direction substantially inclined 22.5 deg. from the c-axis as the pulling up direction by the pulling up method from the BaB2O4 melt. The yield and productivity at the time of processing the single crystal to an isolator element are improved by this pulling up direction. Theα-BaB2O4 single crystal is adequate for optical elements and is capable of providing high-reliability isolators, deflectors, prisms, etc.
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