发明名称 VAPOR GROWTH METHOD
摘要 PROBLEM TO BE SOLVED: To provide the method which enables enhancement of uniformity in film thickness distribution at the time of forming a thin film while allowing a substrate to revolve and autorotate. SOLUTION: This method comprises growing a thin film on a substrate placed on a rotary susceptor that is disposed in a reaction furnace, while allowing the substrate to revolve and autorotate. In the method, conditions which provide a positive quadratic differential coefficient of the film thickness distribution in such a state that the substrate is allowed to revolve, however, not allowed to autorotate, are found and under the conditions which provide a positive quadratic differential coefficient of the film thickness distribution, a thin film is grown while allowing the substrate to revolve and autorotate.
申请公布号 JP2000007493(A) 申请公布日期 2000.01.11
申请号 JP19980178303 申请日期 1998.06.25
申请人 JAPAN ENERGY CORP 发明人 ARAMAKI SATOSHI;KOYAKE MAKOTO;KANEDA WATARU;ONIYAMA HIDEYUKI;NAKAMURA MASASHI;SHIKAMOTO MITSUHIRO
分类号 C30B25/14;C30B25/16;C30B29/42;H01L21/205;(IPC1-7):C30B25/16 主分类号 C30B25/14
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