Boron doping by decaborane

摘要

A method of manufacturing a semiconductor device comprising the steps of: ionizing decaborane; and implanting ionized decaborane into a silicon wafer. Solid decaborane can be vaporized in a reduced pressure atmosphere or by heating. A single decaborane molecule can provide 10 boron atoms while the acceleration energy per each boron atom can be reduced to about +E,fra 1/10+EE of the acceleration energy for a decaborane molecule.