| 摘要 |
A semiconductor processing method of forming field oxide regions includes, a) providing a sacrificial pad oxide layer over a semiconductor substrate; b) providing a GexSiy layer over the pad oxide layer, where x is greater than 0.2, y is from 0 to 0.8, and x+y=1.0; c) providing a patterned nitride oxidation masking layer over the GexSiy layer to define at least one pair of adjacent nitride masking blocks overlying desired active area regions of the substrate; d) etching exposed portions of the GexSiy layer and thereby defining exposed sidewall edges of the GexSiy layer; e) providing an oxidation restriction layer over the respective GexSiy sidewalls, the oxidation restriction layer restricting rate of oxidation of the GexSiy layer from what would otherwise occur if the oxidation restriction layer were not present; f) oxidizing portions of the substrate unmasked by the masking layer to form at least one pair of adjacent SiO2 substrate field oxide regions; g) stripping the patterned masking layer from the substrate; h) after stripping the masking layer, stripping the GexSiy layer or any oxidation product therefrom from the substrate selectively relative to SiO2; and i) after stripping the GexSiy layer or any oxidation product, stripping the pad oxide and any other oxide from the substrate between the pair of adjacent field oxide regions to outwardly expose substrate active area between the pair of field oxide regions. The invention also contemplates products produced by such method.
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