发明名称 |
Zirconium and/or hafnium oxynitride gate dielectric |
摘要 |
A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide.
|
申请公布号 |
US6013553(A) |
申请公布日期 |
2000.01.11 |
申请号 |
US19980115773 |
申请日期 |
1998.07.15 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
WALLACE, ROBERT M.;STOLTZ, RICHARD A.;WILK, GLEN D. |
分类号 |
H01L21/28;H01L21/314;H01L21/316;H01L29/51;(IPC1-7):H01L21/283;H01L21/31;H01L21/441;H01L21/469 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|