Method of manufacturing a semiconductor device

摘要

In a method of manufacturing a semiconductor device, a gate wiring and a source wiring of a thin film transistor in the course of manufacture are connected, and are finally divided, so that it is possible to prevent breakage of a gate insulating film due to influence of plasma at the formation of various insulating films or conductive films. Specifically, openings are formed at every formation of interlayer insulating films to first layer wirings to be finally divided, and dummy electrodes not serving as electrodes are formed in the openings. When patterning a final electrode, openings are further formed in the dummy electrodes, and the first layer wirings are divided through the openings.