| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD device capable of executing film formation onto a long-length substrate with a large area at a high film forming rate and capable of obtaining a thin film small in the generation of defects caused by the sticking of powder and having the uniformity of film characteristics. SOLUTION: In a plasma CVD device having a reaction vessel 1, a means 2 for of introducing a reaction gas into the reaction vessel, a means 3 for exhausting the reaction gas, a cylindrical substrate 4 to be film-formed arranged in the reaction vessel and means 7 to 9 applying high-frequency electric power of 30 to 600 MHz for generating plasma into the reaction vessel and executing film formation by a plasma CVD method, the outside of the cylindrical substrate 4 is provided with plural bar-shaped electric power feeding electrodes 5 and plural bar-shaped earth electrodes 6 at the positions on a circumference with a center axis same as that of the cylindrical substrate 4, and moreover, a mechanism 10 of rotating the cylindrical substrate 4 is provided. In this way, stable discharge is made possible on the space between the electric power feeding electrodes and the earth electrodes under low pressure of 0.1 to 10 Pa, and a film small in defects and good in uniformity can be obtd. at a high film forming rate.
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