Universal memory element and method of programming same

摘要

Method of programming Ovonic memory multistate-digital multibit memory element (14), and use thereof for neural networks and data storage. The device is programmed by applying an energy pulse which is insufficient to switch the memory element from high resistance state to low resistance state, but sufficient to modify said memory material (36) such that accumulation of additional energy pulses causes the memory element to switch from said high resistance state to said low resistance state.