发明名称 SPDT SWITCH SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To provide an SPDT switch semiconductor integrated circuit which eliminates the need to provide plural power sources even when a depletion type GaAs FET is used for logic. SOLUTION: This SPDT switch semiconductor integrated circuit 1 using a depletion type gallium arsenic field effect transistor is incorporated with on inverter circuit 4. Dividing resistors (R1 and R2) for input level adjustment are connected to the gate of a transistor T4 of the inverter circuit 4, at least one diode (D1, D2) is connected between the source and ground, and a transistor T3 for active loading or a load resistance is connected to the drain. Thus the output from the inverter circuit 4, i.e., the drain output of the transistor T4 controls the on/off of one switching transistor T2 of the SPDT switch.</p>
申请公布号 JP2000004149(A) 申请公布日期 2000.01.07
申请号 JP19980168730 申请日期 1998.06.16
申请人 NEW JAPAN RADIO CO LTD 发明人 TAKAHASHI MASARU
分类号 H01P1/15;H03K17/693;H04B1/18;(IPC1-7):H03K17/693 主分类号 H01P1/15
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