| 摘要 |
PROBLEM TO BE SOLVED: To provide a sense amplifier circuit by which such problems that the current consumption of a current mirror type sense amplifier is large and a stable operation characteristic can hardly be obtained because of dispersion of a MOSFET characteristic of a latch type sense amplifier and unbalance of parasitic capacity of an internal node. SOLUTION: In this semiconductor memory, the sense amplifier circuit amplifying a potential of bit lines BL, /BL in a memory cell array is constituted of a current mirror type amplifier(C-AMP) and a latch type amplifier(L-AMP) connected to the next stage of the sense amplifier. The potential of a bit line in the current mirror type amplifier is received and amplified, and further is amplified by the next stage latch type amplifier.
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