| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which can enlarge band wall differencesΔEc andΔEv in a heterojunction for those that are required for laser oscillation, whose characteristic temperature is high (stably operates even at a high temperature for example, about room temperature), which has high light-emitting efficiency and short wavelength. SOLUTION: In a semiconductor light-emitting element, a III-V group mix crystal semiconductor layer containing N(nitrogen) and P(phosphorus) as group V elements is used as an active layer 15 on a semiconductor substrate 11. The active layer 15 is Gax2In1-x2P1-x2 (0<=x2<=1, 0<z2<1). Thus, light emission in a visible wavelength region can be obtained. Since by having N doped a GaInP as the active layer, band gap energy becomes small and the energy on the side of the transmission band and he valence electron band side becomes small as compared to the case when N is not added to GaInP. Consequently, the heterojunction of an arbitrary band offset ratio, in which the band discontinuous quantity of the transmission band is large and which is not available in conventional cases, can be formed by selecting the composition.</p> |
