发明名称 METHOD OF FILLING OPENING OF INSULATING LAYER
摘要 PROBLEM TO BE SOLVED: To introduce a reaction of enhancing wettability and a principle of forming a seed layer on the basis of a reliable filling process of Al-containing metal. SOLUTION: A method through which an opening provided to an insulating layer is quickly and reliably filled up can be used for filling up an opening such as a trench or a viahole. The method is based on a principle of reaction to entrance wettability and to form a seed layer. In contrast to avoidance of formation of TiAl3, this concept uses this reaction profitably to form a very thin and continuous Al-containing seed layer. Lastly, following Al-containing metal is filled up into an opening from base to top. As a result, a filling process can be very quickly carried out, and a valuable product can be realized.
申请公布号 JP2000003962(A) 申请公布日期 2000.01.07
申请号 JP19990123542 申请日期 1999.04.30
申请人 APPLIED MATERIALS INC;INTERUNIV MICRO ELECTRONICA CENTRUM VZW 发明人 BEYER GERALD;MAEX KAREN;PROOST JORIS
分类号 H01L21/28;H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L21/28
代理机构 代理人
主权项
地址