发明名称 |
METHOD OF FILLING OPENING OF INSULATING LAYER |
摘要 |
PROBLEM TO BE SOLVED: To introduce a reaction of enhancing wettability and a principle of forming a seed layer on the basis of a reliable filling process of Al-containing metal. SOLUTION: A method through which an opening provided to an insulating layer is quickly and reliably filled up can be used for filling up an opening such as a trench or a viahole. The method is based on a principle of reaction to entrance wettability and to form a seed layer. In contrast to avoidance of formation of TiAl3, this concept uses this reaction profitably to form a very thin and continuous Al-containing seed layer. Lastly, following Al-containing metal is filled up into an opening from base to top. As a result, a filling process can be very quickly carried out, and a valuable product can be realized.
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申请公布号 |
JP2000003962(A) |
申请公布日期 |
2000.01.07 |
申请号 |
JP19990123542 |
申请日期 |
1999.04.30 |
申请人 |
APPLIED MATERIALS INC;INTERUNIV MICRO ELECTRONICA CENTRUM VZW |
发明人 |
BEYER GERALD;MAEX KAREN;PROOST JORIS |
分类号 |
H01L21/28;H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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