| 摘要 |
PROBLEM TO BE SOLVED: To improve the availability of an etching device, by providing an infrared spectrum monitor capable of monitoring the thickness and the quality of a reaction product deposited on the inside of an etching chamber. SOLUTION: Infrared rays 2 are radiated by a light source 1a in an infrared spectrum monitor 1, enter an etching chamber 5 as a vacuum reaction chamber through a window 3, are reflected by a first reflective mirror 1g to a reflective mirror 1h, and are reflected by the first reflective mirror 1g. The infrared rays 2 having a specified wavelength enter a detector 1e through a half mirror 1c and a filter 1d and are transformed into an electric signal by the detector 1e. The electric signal is amplified by a differential amplifier 1f and is applied to a control section 8 for an etching device. The control section 8 for an etching device sets the cleaning conditions of a reaction product deposited on the inside wall of the etching chamber 5.
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