| 摘要 |
PROBLEM TO BE SOLVED: To lessen a semiconductor device in chip size. SOLUTION: A semiconductor device is equipped with an element 9 buried in a semiconductor chip, through-holes 3 used for connecting the element 9 located inside the semiconductor chip and a back electrode 12 to a wiring are formed, and then a plating wiring is formed inside the through-holes 3. A region of a semiconductor board 1 where elements 9 and a viahole 11 are formed is selectively etched from above its rear so as to expose the wirings inside the through-holes 3. Thereafter, all the rear of the semiconductor board 1 is subjected to sputtering, patterned by the use of resist, and plated for formation of a wiring, and an insulating film 10 is formed. Lastly, the insulating film 10 is etched, and a back electrode 12 is formed.
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