发明名称 |
PRODUCTION OF SINGLE CRYSTAL AND EQUIPMENT FOR GROWING SINGLE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To enhance the yield of the single crystal having a desired composition and to improve the extinction ratio in the production method in which the single crystal is grown by subjecting a vessel containing the raw material for the single crystal to heat-treatment to continuously form a molten zone for the production of the single crystal for an isolator element. SOLUTION: In this production, a raw material for a single crystal is charged into a crucible consisting of glassy carbon to produce a single crystal. This equipment has a heating furnace 40 in which a preheating section 40a and a molten zone formation section 40b are provided with a heater 35A and a heater 35B respectively and a single crystal formation section 40c consists of one or more attachable/detachable heat insulating material units e.g. 41A to 41D, wherein the crucible is preferably enclosed by a hermetic sealing member consisting of quartz.
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申请公布号 |
JP2000001389(A) |
申请公布日期 |
2000.01.07 |
申请号 |
JP19990091849 |
申请日期 |
1999.03.31 |
申请人 |
NGK INSULATORS LTD |
发明人 |
OUCHI RYUICHI;IMAEDA MINORU |
分类号 |
C30B13/14;C30B29/48;(IPC1-7):C30B13/14 |
主分类号 |
C30B13/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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