发明名称 PRODUCTION OF SINGLE CRYSTAL AND EQUIPMENT FOR GROWING SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To enhance the yield of the single crystal having a desired composition and to improve the extinction ratio in the production method in which the single crystal is grown by subjecting a vessel containing the raw material for the single crystal to heat-treatment to continuously form a molten zone for the production of the single crystal for an isolator element. SOLUTION: In this production, a raw material for a single crystal is charged into a crucible consisting of glassy carbon to produce a single crystal. This equipment has a heating furnace 40 in which a preheating section 40a and a molten zone formation section 40b are provided with a heater 35A and a heater 35B respectively and a single crystal formation section 40c consists of one or more attachable/detachable heat insulating material units e.g. 41A to 41D, wherein the crucible is preferably enclosed by a hermetic sealing member consisting of quartz.
申请公布号 JP2000001389(A) 申请公布日期 2000.01.07
申请号 JP19990091849 申请日期 1999.03.31
申请人 NGK INSULATORS LTD 发明人 OUCHI RYUICHI;IMAEDA MINORU
分类号 C30B13/14;C30B29/48;(IPC1-7):C30B13/14 主分类号 C30B13/14
代理机构 代理人
主权项
地址