| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, wherein its final manufacturing process can be shortened in process term after ROM specifications are determined. SOLUTION: Element isolation regions 12 arranged above a matrix, gate wiring layers 13 arranged above the element isolation regions 12 extending in a certain direction and separating from each other by a prescribed space, and aluminum wiring layers 10 arranged above the gate wiring layers 13 extending in a certain direction so as to cross them and separating from each other by a prescribed space are provided onto a semiconductor substrate so as to specify a channel region 14. The aluminum wiring layers 10 are arranged above the element isolation regions 12. |
