| 摘要 |
PROBLEM TO BE SOLVED: To reduce the overall cost of the whole manufacturing process of a semiconductor device and to shorten the manufacturing time. SOLUTION: The method for production of a semiconductor material comprises charging polycrystalline silicon 11 into an annular furnace 17 of a double crucible 14, melting silicon in the annular furnace 17 by using a coil 24 and an electromagnet 26, transferring the resulting silicon melt to a central furnace 15 through holes 18a formed in the inner peripheral wall of the annular furnace 17 to further allow the melt to vertically flow out downward from a withdrawal port 20 of the central furnace 15, and gradually cooling the silicon melt with heaters 28a, 28b and 28c disposed along the silicon melt outflow passage line, thereby to form the melt into a single crystal and to produce a linear semiconductor material 30 while withdrawing it from an opening 32a. Thereafter, on the surface of the linear semiconductor material 30 thus produced, circuits and electrodes are formed and then, the resulting linear semiconductor material 30 is cut into pieces each having a prescribed length. A semiconductor device is manufactured using such a piece of the linear semiconductor material 30 having a prescribed length. |
