| 摘要 |
<p>PROBLEM TO BE SOLVED: To make a semiconductor memory interchangeable with a static type RAM or the like constituting a high-speed memory such as a cache memory by accelerating the writing operation speed of a flash memory having a two layers gate structure type memory cell as a memory element or the like and enlarging the application range of a flash memory or the like, without impairing a characteristic as a non-volatile memory cell. SOLUTION: In this memory, the flash memory or the like is basically constituted of a memory array ARYN for normally storage consisting of first two layers gate structure type memory cells compartively long in the time required for writing by making the depth of a tunnel oxide film comparatively large, and a memory array ARYT for temporarily storage consisting of second two layers gate structure type memory cells comparatively short in the time required for writing by making the depth of a tunnel oxide film comparatively small. In this case, after data required for rewriting from an external access device is written in the memory array ARYT for temporarily storing, transcribed in a specified block of the memory array ARYN for normally storing with a page unit.</p> |
