发明名称 A METHOD OF FABRICATING TRANSPARENT CONDUCTORS
摘要 1325919 Making transparent conducting films RCA CORPORATION 22 Dec 1970 [2 Jan 1970] 60780/70 Heading C7F A transparent conductor is formed by R. F. sputtering an In 2 O 3 film which is anion deficient and doped with Sn or Sb, and then heating to form a stoichiometric oxide layer. A movable shutter 36 may be positioned during a cleaning step, between the target 28 and the substrate 34 of e.g. glass. A grounded shield 40 is positioned around the target and a magnetic field may be provided by a coil 42. The target may be rotated and may be formed by hot pressing a powdered mixture of In 2 O 3 and SnO 2 . The sputtering atmosphere may be argon.
申请公布号 ZA7006775(B) 申请公布日期 1971.07.28
申请号 ZA19700006775 申请日期 1970.10.05
申请人 RCA CORP 发明人 VOSSEN J
分类号 H01B13/00;C23C14/08;C23C14/58;G02F1/1343;G09F9/35;H01B1/00;H01C17/06;H01C17/12;H01J9/233 主分类号 H01B13/00
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