SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF

摘要

A semiconductor device comprises a semiconductor substrate, isolation regions formed in the semiconductor substrate, a semiconductor layer of a first conductivity type formed between the isolation regions, a gate oxide layer formed on an active region of the semiconductor layer of the first conductivity type, a gate electrode formed on the gate oxide layer, an insulating layer formed on the sidewall of the gate electrode, and a semiconductor layer of a second conductivity type for source/drain formed adjacent to the insulating layer on the sidewall of the gate electrode and intended to cover part of the isolation regions. The gate electrode and the semiconductor layer of the first conductivity type are connected electrically, the semiconductor layer of the second conductivity type is formed above the semiconductor layer of the first conductivity type, and the thickness of the semiconductor layer of the second conductivity type is such that it gradually increases as the layer extends from the isolation region toward the gate electrode.