发明名称 |
METHOD FOR FORMING MONOCRYSTALLINE SILICON LAYER, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
摘要 |
Monocrystalline silicon is deposited by a catalyst CVD method by using a crystalline sapphire layer (50) formed on an insulating substrate (1) as the seeds, and a silicon epitaxial layer (7) is formed. P-type impurity ions are implanted into a monocrystalline silicon layer, and then N-type impurity ions are implanted to make a P-channel MOS transistor portion a monocrystalline silicon layer (14). In a monocrystalline silicon layer (11), an N<+> source region (20) and drain region (21) of an N-channel MOS transistor are formed. Thus, a silicon layer is epitaxially grown uniformly at low temperature.
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申请公布号 |
WO0001005(A1) |
申请公布日期 |
2000.01.06 |
申请号 |
WO1999JP03522 |
申请日期 |
1999.06.30 |
申请人 |
SONY CORPORATION;YAMOTO, HISAYOSHI;YAMANAKA, HIDEO;SATOU, YUICHI;YAGI, HAJIME |
发明人 |
YAMOTO, HISAYOSHI;YAMANAKA, HIDEO;SATOU, YUICHI;YAGI, HAJIME |
分类号 |
C30B25/02;H01L21/20;H01L21/205;H01L21/336;H01L21/762;H01L21/77;H01L21/84;H01L21/86;H01L29/786;(IPC1-7):H01L21/205 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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