| 摘要 |
The invention relates to a method for producing and separating microscopic semiconductor light-emitting diodes, comprising the following steps: a) producing a semiconductor light-emitting device (100) comprising a pn-junction (2-4) and metallization layers (6, 7); b) applying an etching mask (9-11) with a predetermined structure to one side of the semiconductor device (100), the masked areas corresponding to the arrangement and shape of the diodes (30) being formed; c) applying a support (8, 12) to the other side of the semiconductor device (100); d) vertically etching the semiconductor material into the openings of the etching mask (9-11) as far as the support (8, 12), hereby producing a diode arrangement containing a plurality of diodes (30) beneath the masked area; e) removing the etching mask (9-11); f) providing a holding device (20) containing recesses (22) whose arrangement and shape correspond to those of the diodes (30) and which are suitable for receiving diodes (30); g) locking the diode arrangement into the holding device (20); and h) removing the support (8, 12). The inventive method can be used for producing an LED display device with a high image point density. |
