| 摘要 |
<p>A sputter target consisting of a high-purity Nb containing not more than 3000 ppm of Ta and not more than 200 ppm of oxygen, with variations in Ta content limited to within +/- 30 % through the whole target and variations in oxygen content to within +/- 80 % throughout the whole target, thereby implementing a low-resistivity wiring film. In addition, each Nb crystal grain in the sputter target has a grain size 0.1 to 10 times the average crystal grain size and a grain size ratio between adjacent crystal grains is 0.1 to 10. Such a sputter target can minimize the occurrence of giant dust and is suitable for forming an Nb film used as a liner material for Al wiring.</p> |
