CHEMICAL MECHANICAL POLISHING SLURRY USEFUL FOR COPPER/TANTALUM SUBSTRATE

摘要

The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic ami no compound, a second polishing slurry including an abrasive, an oxidizing agen t, and acetic acid wherein the weight ratio of the oxidizing agent to acetic ac id is at least 10 and a method for using the first and second polishing slurrie s sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.