发明名称 |
Process for producing a photovoltaic device |
摘要 |
<p>A photovoltaic device have a pin junction of a p-layer, an i-layer and an n-layer, wherein the p-layer includes a first p-layer and a second p-layer thereover, the first p-layer having a thickness of 5nm or less and being uniformly doped with a p-type impurity, and the second p-layer being formed by decomposition of a gas which does not positively incorporate a p-type impurity. <IMAGE></p> |
申请公布号 |
EP0969523(A2) |
申请公布日期 |
2000.01.05 |
申请号 |
EP19990304582 |
申请日期 |
1999.06.11 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KISHIMOTO, KATSUSHI;NAKANO, TAKANORI;SANNOMIYA, HITOSHI;NOMOTO, KATSUHIKO |
分类号 |
H01L31/04;H01L31/075;H01L31/20;(IPC1-7):H01L31/075 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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