Halbleiteranordnung mit Schmelzsicherung

摘要

A semiconductor device with a fuse comprises: a semiconductor substrate (31); a field oxide layer (36); a fuse (35) formed on the field oxide layer (36); an insulating layer (37) over the fuse (35) and the field oxide layer (36); a passivation layer (38) formed on the insulating layer (37) and having an opening above the fuse (35); and a nitride layer (39) formed on the passivation layer (38). It also comprises a metal guard ring (41) which surrounds a narrow blowable portion (35A) of the fuse (35), and is formed under the passivation layer (38) to extend to the semiconductor substrate (31) through the insulating layer (37) and the field oxide layer (36). The semiconductor substrate (31) consists of a base semiconductor substrate (32) and an epitaxial semiconductor layer (33) and is provided with an isolation region (34) which region is formed in the epitaxial semiconductor layer (33) so as to completely surround and isolate a portion (33A) of the epitaxial layer below the narrow portion (35A), and the metal guard (41) that comes into direct contact with the isolation region (34).