发明名称 |
LATERALE HOCHSPANNUNGS-DMOS-ANORDNUNG MIT HÖHERER DRIFTZONE |
摘要 |
A lateral DMOS transistor structure formed in N-type silicon is disclosed which incorporates a special N-type enhanced drift region. In one embodiment, a cellular transistor with a polysilicon gate mesh is formed over an N epitaxial layer with P body regions, P+ body contact regions, N+ source and drain regions, and N enhanced drift regions. The N enhanced drift regions are more highly doped than the epitaxial layer and extend between the drain regions and the gate. Metal strips are used to contact the rows of source and drain regions. The N enhanced drift regions serve to significantly reduce on-resistance without significantly reducing breakdown voltage. |
申请公布号 |
DE69513680(D1) |
申请公布日期 |
2000.01.05 |
申请号 |
DE1995613680 |
申请日期 |
1995.09.25 |
申请人 |
MICREL INC., SAN JOSE |
发明人 |
HSING, MICHAEL;GARNETT, MARTIN;MOYER, JAMES;ALTER, MARTIN;LIFTIN, HELMUTH |
分类号 |
H01L23/482;H01L29/06;H01L29/08;H01L29/417;H01L29/423;H01L29/78 |
主分类号 |
H01L23/482 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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