发明名称 |
Integrated inorganic/organic complementary thin-film transistor circuit |
摘要 |
An integrated organic/inorganic complementary thin-film transistor circuit comprises a first and a second transistor which are operatively connected on a common substrate, wherein the first transistor is an inorganic thin-film transistor and the second an organic thin-film transistor. The inorganic thin-film transistor is an n-channel transistor and the organic thin-film transistor is a p-channel transistor or vice versa. Each of the transistors has a separate gate electrode and the organic active semiconductor material is in the case of a p-channel semiconductor in the organic thin-film transistor electrically isolated from the inorganic thin-film transistor. In a first method for fabricating a transistor circuit of this kind separate gate electrodes are deposited for each transistor on a common substrate, the material for the source and the drain electrode of the organic thin-film transistor are deposited on the same layer level in the thin-film structure of the organic thin-film transistor and in each case the organic active semiconductor material in an organic p-channel transistor is provided electrically isolated from the inorganic n-channel transistor, and the organic active semiconductor material in an organic n-channel transistor optionally electrically isolated from the inorganic p-channel transistor. |
申请公布号 |
AU4295999(A) |
申请公布日期 |
2000.01.05 |
申请号 |
AU19990042959 |
申请日期 |
1999.06.18 |
申请人 |
OPTICOM ASA |
发明人 |
THOMAS JACKSON;MATHIAS BONSE;DANIEL B. THOMASSON;KLAUK HAGEN;DAVID J. GUNDLACH |
分类号 |
H01L27/092;H01L21/336;H01L21/77;H01L21/8238;H01L21/84;H01L27/12;H01L27/28;H01L29/786;H01L51/05;H01L51/30 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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