| 摘要 |
<p>A lithographic apparatus, e.g. using an electron beam, to expose a radiation sensitive layer on a substrate to the pattern on a mask comprising pattern areas and opaque support. The apparatus uses a beam having a trapezoidal profile to provide a more uniform exposure at sub-field stitches in the event of any positional inaccuracies. The trapezoidal beam profile is generated by changing the size or position of the illumination beam on the mask during the course of an exposure period. <IMAGE></p> |
