METHOD FOR FORMING A STRUCTURED METALLIZATION ON A SEMICONDUCTOR WAFER

摘要

The present invention relates to a method of forming a structured metallization on a semiconductor wafer, wherein a main surface of the wafer has a passivation layer applied thereto, which is structured so as to determine at least one bond pad. Initially, a metal bump is produced on the at least one bond pad. An activated dielectric is then produced on the areas of the passivation layer on which the structured metallization is to be formed. Finally, metal is chemically deposited directly on the activated dielectric and on the metal bump in such a way that the structured metallization formed on the activated dielectric and the metal chemically deposited on the metal bump are electro-conductively joined.