发明名称 Demagnifying projection-optical system for electron beam lithography with aberration control
摘要 Electron-beam demagnifying projection-optical systems are disclosed that perform magnification adjustment, image-rotation adjustment, and focus correction while not contributing to aberrations. Also disclosed are electron-beam microlithography apparatus comprising such a projection-optical system. The projection-optical system comprises first and second projection lenses arranged on an optical axis, and project an electron beam, that has passed through a mask pattern, with demagnification on a substrate. Each projection lens includes an auxiliary lens that generates a magnetic field having an axial strength distribution proportional to the axial magnetic field distribution of the respective projection lens. By adjusting the direction and amount of electrical current through the auxiliary lenses at least of focal point, image rotation, and image magnification can be independently adjusted.
申请公布号 US6011268(A) 申请公布日期 2000.01.04
申请号 US19980120260 申请日期 1998.07.21
申请人 NIKON CORPORATION 发明人 NAKASUJI, MAMORU
分类号 G03F7/20;H01J37/141;H01J37/21;H01J37/30;H01J37/302;H01J37/305;H01L21/027;(IPC1-7):H01J37/30 主分类号 G03F7/20
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