发明名称 |
Sensing circuit with charge recycling |
摘要 |
A circuit for reading data from a memory device reduces electric power consumption by recycling in a precharge period the charge consumed in a preceding sensing period. The circuit includes a pair of data lines set to a voltage level higher than a precharge voltage by the sensing operation of a pull-up amplifier, and a pair of data lines set to a voltage level lower than the precharge voltage by the sensing operation of a pull-down amplifier. The charge consumed in the sensing period is recycled by electrically connecting the two pairs of data lines, respectively, during a succeeding precharge period.
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申请公布号 |
US6011738(A) |
申请公布日期 |
2000.01.04 |
申请号 |
US19980161390 |
申请日期 |
1998.09.28 |
申请人 |
LG SEMICON CO., LTD. |
发明人 |
SON, JOO-HIUK;RHA, HAE-YOUNG;AHN, JIN-HONG |
分类号 |
G11C11/419;G11C7/06;G11C7/12;G11C11/409;G11C16/06;(IPC1-7):G11C7/02 |
主分类号 |
G11C11/419 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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