发明名称 Sensing circuit with charge recycling
摘要 A circuit for reading data from a memory device reduces electric power consumption by recycling in a precharge period the charge consumed in a preceding sensing period. The circuit includes a pair of data lines set to a voltage level higher than a precharge voltage by the sensing operation of a pull-up amplifier, and a pair of data lines set to a voltage level lower than the precharge voltage by the sensing operation of a pull-down amplifier. The charge consumed in the sensing period is recycled by electrically connecting the two pairs of data lines, respectively, during a succeeding precharge period.
申请公布号 US6011738(A) 申请公布日期 2000.01.04
申请号 US19980161390 申请日期 1998.09.28
申请人 LG SEMICON CO., LTD. 发明人 SON, JOO-HIUK;RHA, HAE-YOUNG;AHN, JIN-HONG
分类号 G11C11/419;G11C7/06;G11C7/12;G11C11/409;G11C16/06;(IPC1-7):G11C7/02 主分类号 G11C11/419
代理机构 代理人
主权项
地址
您可能感兴趣的专利